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PD57018-E RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Black RF MOSFET Transistors

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PD57018-E RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Black RF MOSFET Transistors

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Brand Name : ST

Model Number : PD57018-E

MOQ : 1000

Payment Terms : T/T

Supply Ability : 5k-10k per day

Delivery Time : 5-8 work days

Packaging Details : Package: QFN

Type : integrated circuit

D/C : 2021+

Frequency - Switching : standard

Output power : 18 W

Minimum operating temperature : - 65 C

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Product name:PD57018-E PD57018-E RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Black RF MOSFET Transistors
Manufacturer: STMicroelectronics Product Category: RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors
Transistor Polarity: N-Channel Technology: Si
Id-Continuous Drain Current: 2.5 A Vds-drain-source breakdown voltage: 65 V
Rds On-Drain Source On Resistance: 760 mOhms Operating frequency: 1 GHz
Gain: 16.5 dB Output power: 18 W
Minimum operating temperature: - 65 C Maximum operating temperature: + 150 C
Installation style: SMD/SMT Package/Case: PowerSO-10RF-Formed-4
Package: Tube Brand: STMicroelectronics
Channel Mode: Enhancement Configuration: Single
Forward Transconductance - Min: 1 S Height: 3.5 mm
Length: 7.5 mm Moisture Sensitivity: Yes
Pd-Power Dissipation: 31.7 W Product Type: RF MOSFET Transistors
Series: PD57018-E Factory Packing Quantity: 400
Subcategory: MOSFETs Type: RF Power MOSFET
Vgs - Gate-Source Voltage: 20 V Width: 9.4 mm
Unit weight: 3 g


Product Tags:

PD57018-E semiconductor integrated circuit

      

1 GHz semiconductor integrated circuit

      

16.5 dB semiconductor integrated circuit

      
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